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Dmitri Z. Garbuzov (1940, Sverdlovsk, Russia - August 2006, Princeton, New Jersey) was one of the pioneers and inventors of room temperature continuous-wave-operating diode lasers and high-power diode lasers. The first room-temperature, continuous-wave diode lasers were successfully invented, developed, and almost simultaneously demonstrated at the Ioffe Physico-Technical Institute in Leningrad, Russia by a team including Garbuzov and Zhores Alferov (winner of the 2000 Nobel Prize for Physics),〔(www.ioffe.ru )〕 and by the competing team of I. Hayashi and M. Panish at Bell Telephone Laboratories in Murray Hill, New Jersey. Both teams attained this accomplishment in 1970. Garbuzov was also responsible for the development of practical high-power, high-efficiency, diode lasers at a variety of wavelength bands from visible to mid-infrared wavelengths. Following perestroika, Garbuzov, who had served as an accomplished and respected scientist and manager within the Soviet scientific research system, established a research group in the West which employed multiple Russian émigré scientists and simultaneously contributed to three American for-profit enterprises. ==Personal life== Dmitri Zalmanovitch Garbuzov was born in Sverdlovsk, Russia in 1940. His father, Zalman Garbuzov, was a prominent engineer. His mother was Natalia Polivoda. He married Galina Minina and they have two children, Alina and Dmitri. Garbuzov succumbed to cancer, diagnosed at an advanced stage, in August 2006 at the age of 65 at his home in Princeton, New Jersey. 抄文引用元・出典: フリー百科事典『 ウィキペディア（Wikipedia）』 ■ウィキペディアで「Dmitri Z. Garbuzov」の詳細全文を読む スポンサード リンク
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